features l higher sensitivity and low dark current than conventional type l sensitivity matching with bgo and csi (ti) scintillators l high quantum efficiency qe=85 % ( =540 nm) l low capacitance l high-speed response l high stability l good energy resolution applications l scintillation detectors l calorimeters l hodoscopes l tof counters l air shower counters l particle detectors, etc. photodiode si pin photodiode large area sensors for scintillation detection s3204/s3584 series s3204/s3584 series are large area si pin photodiodes having an epoxy resin window. these photodiodes are also available without window. 1 general ratings / absolute maximum ratings absolute maximum ratings active area depletion layer thickness type no. dimensional outline window material (mm) (mm) reverse voltage v r max. power dissipation p (mw) operating temperature topr (c) storage temperature ts t g (c) S3204-05 epoxy resin s3204-06 window-less 0.5 150 s3204-08 epoxy resin s3204-09 ? window-less 18 18 0.3 100 s3584-05 epoxy resin s3584-06 window-less 0.5 150 s3584-08 epoxy resin s3584-09 ? window-less 28 28 0.3 100 100 -20 to +60 -20 to +80 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) photo sensitivity s dark current i d v r =100 v = p type no. spectral response range (nm) peak sensitivity wavelength p (nm) (a/w) lso 420 nm (a/w) bgo 480 nm (a/w) csi(tl) 540 nm (a/w) short circuit current isc 100 lx (a) typ. (na) max. ( na) te m p . coefficient of i d t cid (times/ c) cut-off frequency fc v r =100 v -3 db (mhz) te r m i n al capacitance ct f= 1mhz v r =100 v (pf) nep v r =100 v (w/hz 1/2 ) S3204-05 0.62 0.19 0.25 0.3 s3204-06 320 to 1120 980 0.64 0.23 0.32 0.39 310 15 50 20 80 1.2 10 -13 s3204-08 0.66 0.20 0.3 0.36 s3204-09 320 to 1100 960 0.66 0.22 0.33 0.41 340 6 * 20 * 20 * 130 * 6.6 10 C14 * s3584-05 0.62 0.19 0.25 0.3 s3584-06 320 to 1120 980 0.64 0.23 0.32 0.39 740 20 100 10 200 1.3 10 -13 s3584-08 0.66 0.20 0.3 0.36 s3584-09 320 to 1100 960 0.66 0.22 0.33 0.41 780 10 * 30 * 1.12 10 * 300 * 8.6 10 C14 * *1: v r =70 v
si pin photodiode s3204/s3584 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, t elephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2006 hamamatsu photonics k.k. dimensional outlines (unit: mm) s3204 series s3584 series 10 na 10 a 1 a 1 pa 100 pa 1 na 100 na 10 pa dark current (typ.) ambient temperature (?c) -20 60 80 02040 s3584-08/-09 (v r =70 v) s3204-08/-09 (v r =70 v) s3584-05/-06 (v r =100 v) S3204-05/-06 (v r =100 v) reverse voltage (v) terminal capacitance 10 pf 0.1 1 10 1000 100 100 pf 1 nf 10 nf (typ. ta=25 ? c, f=1 mhz) s3584-08/-09 S3204-05/-06 s3204-08/-09 s3584-05/-06 0 temperature coefficient ( % / ? c) 200 400 600 800 1000 +1.0 +0.5 (typ.) +1.5 -0.5 wavelength (nm) wavelength (nm) photo sensitivity (a/w) 0 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1200 1000 0.6 0.7 (typ. ta=25 ? c) s3204/s3584-08 s3204/s3584-05 kpina0040eb kpina0041eb ) kpinb0227ea kpinb0093ec %
reverse voltage (v) dark current 0.1 1 10 1000 100 100 pa 1 na 100 na 10 na (typ. ta=25 ? c) s3584-08/-09 S3204-05/-06 s3204-08/-09 s3584-05/-06 cat. no. kpin1051e05 mar. 200 6 dn kpinb0228eb kpinb0229eb kpinb0230eb white ceramic active area 0.45 lead 18.0 3.4 25.5 18.0 25.5 photosensitive surface 10 2.54 0.2 a 5.0 0.2 type no. S3204-05/-06 1.0 1.2 a s3204-08/-09 1.75 + 0 - 0.6 + 0 - 0.6 white ceramic 0.45 lead + 0 - 0.8 + 0 - 0.8 3.4 28.0 35.6 1.75 10 2.54 0.2 28.0 active area photosensitive surface 35.6 a 5.0 0.2 type no. s3584-05/-06 1.0 1.2 a s3584-08/-09 ) ! kpinb0264ea wavelength (nm) photo sensitivity (a/w) 0 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1200 1000 0.6 0.7 (typ. ta=25 ? c) s3204/s3584-09 s3204/s3584-06 2
|
